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DSS4140U
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
* * * * * * * Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Low Collector-Emitter Saturation Voltage, VCE(SAT) Complementary PNP Type Available (DSS5140U) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green Device" (Note 2)
Mechanical Data
* * * * * * * * Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish Matte Tin annealed over Copper Plated Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value 40 40 5 1 2 1 Unit V V V A A A
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25C Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 400 313 -55 to +150
Unit mW C/W C
1. No purposefully added lead. 2. Diode's Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS4140U
Document number: DS31689 Rev. 2 - 2
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DSS4140U Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO Min 40 40 5 300 300 200 150 Typ 9 60 30 30 380 350 30 Max 100 50 100 100 900 200 250 500 500 1.2 1.1 Unit V V V nA A nA nA Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 150C VCE = 40V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA VCE = 5V, IC = 500mA VCE = 5V, IC = 1A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCE = 5V, IC = 1A VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage
NEW PRODUCT
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain
hFE
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) Cobo fT ton td tr toff ts tf
mV m V V pF MHz ns ns ns ns ns ns
VCC = 10V IC = 0.5A, IB1 = IB2 = 25mA
4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
500
10
Pw = 1ms
PD, POWER DISSIPATION (mW)
IC, COLLECTOR CURRENT (A)
400
1
Pw = 10ms
300
0.1
Pw = 100ms DC
200
0.01
100
RJA = 313C/W
0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 150
0.001 0.1
1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3)
DSS4140U
Document number: DS31689 Rev. 2 - 2
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(c) Diodes Incorporated
DSS4140U
1,600 1,400 hFE, DC CURRENT GAIN 1,200 1,000 800 600 400
TA = -55C T A = 150C VCE = 5V
1
IC/IB = 10
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.1
T A = 150C TA = 85C TA = 25C
NEW PRODUCT
TA = 85C
TA = 25C
0.01
TA = -55C
200 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current
0.001 0.1
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
VCE = 5V
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
IC/IB = 10
1.0
1.0
0.8
T A = -55C
0.8
TA = -55C
0.6
T A = 25C
0.6
TA = 25C
0.4
T A = 85C
0.4
TA = 85C
0.2
T A = 150C
0.2 0 0.1
TA = 150C
0 0.1
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current
180
150 CAPACITANCE (pF)
f = 1MHz
120
90
60
Cibo
30
Cobo
0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
DSS4140U
Document number: DS31689 Rev. 2 - 2
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(c) Diodes Incorporated
DSS4140U
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 RJA(t) = r(t) * RJA RJA = 240C/W P(pk) D = 0.01 D = 0.005
NEW PRODUCT
D = 0.9
D = 0.02
0.01
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 /t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 8 Transient Thermal Response (Note 3)
100
1,000
10,000
Ordering Information
Part Number DSS4140U-7
Notes:
(Note 5) Case SOT-323 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
ZN6
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
Package Outline Dimensions
A
BC
G H K M
J
D
L
SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0 8 All Dimensions in mm
DSS4140U
Document number: DS31689 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated
DSS4140U Suggested Pad Layout
Y Z
NEW PRODUCT
C
Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DSS4140U
Document number: DS31689 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated

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